Nanostructure research and electron microscopy

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In-situ transmission electron microscopy of nanoscale processes in disordered materials

In-situ electron microscopy is essential for studying dynamic processes. Investigation of nanoscale processes in functional materials is crucial towards understanding the functionality of emerging materials and their subsequent designing. Particularly, aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM) is very suitable method to make direct observation of dynamical process in wide range of materials. In Cs-corrected STEM the size of a fine electron probe is comparable or even smaller with a size of atomic species. Consequently, the focused electron beam can be used as a tool for direct manipulation of atomic species in any crystal lattice.

The research activity of the group focuses at understanding the nanoscale processes (e.g. vacancy ordering, structural reconfiguration of van der Waals-bonded compounds) in chalcogenide-based materials for memory application by using the in situ Cs-corrected STEM.

Selected publications

  • A. Lotnyk, U. Ross, T. Dankwort, I. Hilmi, L. Kienle, B. Rauschenbach
    Atomic structure and dynamic reconfiguration of layered defects in van der Waals layered Ge-Sb-Te based materials
    Acta Materialia 141 (2017) 92-96

  • A. Lotnyk, S. Bernütz, X. Sun, U. Ross, M. Ehrhardt, B. Rauschenbach
    Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films
    Acta Materialia 105 (2016) 1-8