In recent years, chalcogenide-based phase change materials attract much attention due to their important optical and electronic properties. The alloys exhibit unique materials properties and are used as active layer for data storage in phase change memory (PCM) technology (e.g. Intel Optane Memroy). Currently, the Phase Change Random Access Memory (PCRAM) relies on the reversible transition between amorphous and crystalline states. However, power consumption is a critical issue. Nanoscale engineering of phase change materials has been shown to be a promising approach for further development of the materials with lower power consumption. The approach is based on the synthesis of chalcogenide-based superlattices (SLs), also known as interfacial PCM (iPCM). These improved performances have been ascribed to the fact that the switching in iPCM cells is a melting-free mechanism. Moreover, storage devices based on solely crystalline structures will benefit of much stable resistance in addition. Theoretical models of the reversible switching and resistance contrast in SLs focus on the stacking sequence of particular layers. Consequently, the knowledge of the proper local atomic arrangement in chalcogenide-based materials is of paramount importance for understanding the switching mechanisms and their material properties as well as for designing of new materials with advance properties.

The research activity of the group aims at understanding the interplay between the growth, local structure and properties of chalcogenide-based phase change alloys. The materials under investigation are epitaxial chalcogenide-based thin films and SLs grown by pulsed laser deposition (in cooperation with the R&D Focus Non-thermal Thin Film Deposition and Nanostructures). The local structure is revealed by combination of state-of-the art transmission electron microscopy and theoretical image simulation.