For doping, engineering and synthesis of materials conventional broad beam ion implantation with ion energies between 50 eV and 200 keV as well as plasma immersion ion implantation is employed. In addition, the maskless implantation of single ions using a highly focussed ion beam is currently under development, for example, for sensing applications with single atoms. For this purpose, a commercial FIB was equipped with an electron beam ion source (EBIS). In future it is planned to perform the implantation deterministically, i.e. to count each ion. Studies of suitable detection technologies are currently under way in collaboration with the Universität Leipzig.

• High-current broad beam ion implantation with up to 200 keV for doping, engineering and synthesis of materials
• Low-energy ion implantation with energies down to 50 eV
• Surface engineering and phase transformation of materials by plasma immersion ion implantation (PIII)
• Leibniz Joint Lab: Deterministic single ion implantation currently under development for applications in quantum technologies

Selected publications

• J. Lehnert, D. Spemann, M. H. Hatahet, S. Mändl, M. Mensing, A. Finzel, A. Varga, B. Rauschenbach
  Graphene on silicon dioxide synthesized using carbon ion implantation in copper foils with PMMA-free transfer
  Appl. Phys. Lett. 110 (2017) 233114
  https://doi.org/10.1063/1.4985437
  
  
• P. Räcke, D. Spemann, J. W. Gerlach, B. Rauschenbach, J. Meijer
  Detection of small bunches of ions using image charges
  Scientific Reports 8 (2018) 9781
  DOI:10.1038/s41598-018-28167-6
  
  
• S. Mändl, J. Lutz, C. Díaz, J.W. Gerlach, J.A. García
  Influence of Reduced Current Density on Diffusion and Phase Formation during PIII Nitriding of Austenitic Stainless Steel and CoCr Alloys
  Surf. Coat. Tech. 239 (2014) 116-122
  doi.org/10.1016/j.surfcoat.2013.11.029