Ion beam assisted patterning and smoothing

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Ion beam induced self-organization

Figure (1) Nanostructures in InAs with hexagonal short range order
Figure (2) Pattern on silicon (Si) with simultaneous codeposition of iron (Fe) or molybdenum (Mo)

For particular sputtering conditions with low and medium energy ions self-organized nanostructures can evolve on solid surfaces. In the last decades a large variety of evolving surface structures were observed, such as periodic ripple patterns, arrays of dots or holes. The diversity of nanostructures that can be formed in only one-step in a wide variety of materials (e.g. elemental and compound semiconductors, single and polycrystalline metals, oxides) makes this technique an attractive alternative route for the production of nanopatterned surfaces. Additionally, low-energy ion beam irradiation of surfaces under simultaneous codeposition of small amounts of metal atoms gives rise to a wide variety  of surface nanopatterns, which can be further tuned by controlling the kind and the amount of metals.

  • Investigation of self-organization processes during ion beam erosion of surfaces

  • Materials (examples): Element and compound semiconductors, metals, oxides, …

  • Structure formation with simultaneous codeposition of metals, e.g. Iron (Fe), Molybdenum (Mo), Titanium (Ti), …

  • In combination with top-down technologies



Selected publications

  • Y. Liu, D. Hirsch, R. Fechner, Y. Hong, S. Fu, F. Frost, B. Rauschenbach,
    Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition,
    Appl. Phys. A 124 (2018) 73
    doi: 10.1007/s00339-017-1393-4

  • M. Teichmann, J. Lorbeer, F. Frost, B. Rauschenbach,
    Ripple coarsening on ion beam-eroded surfaces,
    Nanoscale Res. Lett. 9 (2014) 439
    doi: 10.1186/1556-276X-9-439

  • F. Frost, A. Schindler, F. Bigl,
    Roughness Evolution of Ion Sputtered Rotating InP Surfaces: Pattern Formation and Scaling Laws,
    Phys. Rev. Lett. 85 (19) (2000) 4116-4119
    doi: 10.1103/PhysRevLett.85.4116