The goal of the project was investigating the potential and technical realization of an image charge detector for detecting single ions with only a single pass through the detector. Such a detector enables deterministic ion implantation, i.e. the highly precise placement of single counted ions in surface-near regions of practically any substrate for applications in quantum technologies. For this purpose, suitable ultra-low noise electronics based on silicon and GaAs transistors was investigated and optimized regarding noise performance and sensitivity in a test setup. In parallel, the beam transport in the ionLINE implanter was configured for integration of the image charge detector. After its optimization and integration in the ionLINE the image charge detector shall be characterized under cryogenic operation regarding detection sensitivity. Finally, the data shall be used to critically evaluate the potential of image charge detection for single ion detection and a detailed technical realization of such a detector shall be proposed.

The work is done in collaboration with the Universität Leipzig in the Leibniz Joint Lab "Single ion implantation".

Duration: 2017-2020
Funding: 314.477,00 Euro
Funding programme: Sächsische Aufbaubank (SAB)
Cooperation partner: Universität Leipzig

Contact:
Dr. Daniel Spemann
Cross-section Unit Tool Development
Phone: 49 (0)341 235-2681
E-Mail: daniel.spemann(at)iom-leipzig.de